Title :
Silicon-on-Glass (SiOG) substrate technology: Process and materials properties
Author :
Cites, J.S. ; Couillard, J.G. ; Gadkaree, K.P.
Author_Institution :
Corning Inc., Corning, NY, USA
Abstract :
This paper is an introduction to a new silicon-on-glass substrate technology. The fabrication process and material properties of SiOG are presented. The semiconductor film has good electrical properties, comparable to other SOI technologies, and is strongly attached to a large area transparent substrate via an in-situ barrier layer compatible with FPD processing.
Keywords :
semiconductor thin films; silicon-on-insulator; FPD processing; SOI technologies; Si; electrical properties; fabrication process; flat panel display processing; semiconductor film; silicon-on-glass substrate technology; Amorphous silicon; Bonding; Flat panel displays; Glass; Grain boundaries; Material properties; Plasma temperature; Semiconductor films; Silicon on insulator technology; Substrates;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318764
