DocumentCode :
2291515
Title :
Novel architecture for inertial grade SOI MEMS inertial sensors
Author :
Aziz, Aznita Abdul ; Sharaf, Abdel-Hameed ; Serry, Mohamed ; Sedky, Sherif
Author_Institution :
Sci. & Technol. Res. Center (STRC), American Univ. in Cairo, Cairo, Egypt
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
2
Abstract :
This work reports, for the first time, on a novel architecture for realizing high performance miniaturized micromachined inertial sensors based on silicon on insulator (SOI) technology. The new sensors are essential components for high precision inertial navigation systems (INS) serving a wide range of applications varying from automotive to space. Similar to the state-of-the-art designs and architectures, our novel architecture utilizes SOI technology, which is crucial for realizing such electro-mechanical sensors. This is mainly due to the fact that it allows for having stress free suspensions and relatively very large proof masses (for bulk rather than surface micromachined MEMS) coupled with the flexibility of choosing between the presence or absence of electrical isolation between the upper and lower parts of the SOI wafer depending on the sensor´s layout. This accordingly enables having the electrical contacts isolated from the rest of the sensor´s structure. Typically, vibratory micromachined gyroscopes (VMG) and accelerometers are designed in-plane, i.e. the suspension and the proof mass vibrate in the same plane parallel to the substrate surface. Such in-plane architecture reduces dramatically the sensor´s fill factor (typically around 17%); hence the Brownian noise level and overall sensitivity are degraded due to the reduced proof mass. Thus, a dramatic enhancement in performance can be achieved by improving the fill factor as this has a direct impact on increasing the proof mass significantly. Accordingly, we introduced, for the first time, the vertically suspended micromachined inertial sensor displayed in Figs. 1 and 2. Such design allows increasing the fill factor by more than a factor of four (up to 80-90%). Moreover, this design offers a decoupled geometric design of the proof mass and the support stiffness dimensions. The performance of the proposed sensors was analyzed using finite element method (FEM) to determine the natural mode shapes and f- requencies in addition to the mechanical stability and the drive-sense mode decoupling (1-2% similar to common designs) for the MEMS gyroscopes.
Keywords :
finite element analysis; gyroscopes; inertial navigation; microsensors; silicon-on-insulator; Brownian noise level; MEMS gyroscopes; SOI wafer; accelerometer; decoupled geometric design; drive-sense mode decoupling; electrical isolation; electromechanical sensors; finite element method; high precision inertial navigation systems; inertial grade SOI MEMS inertial sensors; mechanical stability; miniaturized micromachined inertial sensors; sensor fill factor; silicon on insulator technology; vibratory micromachined gyroscopes; Automotive engineering; Gyroscopes; Inertial navigation; Isolation technology; Micromechanical devices; Sensor systems and applications; Silicon on insulator technology; Space technology; Stress; Suspensions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318765
Filename :
5318765
Link To Document :
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