Title :
Simulation and optimization of lightly-doped ultra-thin Triple Metal Double Gate (TM-DG) MOSFET with high-K dielectric for diminished short channel effects
Author :
Gupta, Santosh Kumar ; Baidya, Achinta ; Baishya, S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, Silchar, India
Abstract :
In this paper, we have proposed Lightly-Doped Ultra-Thin Triple Metal Double Gate (TM-DG) MOSFET with High-K Dielectric in the gate oxide to reduce the Short Channel Effects (SCEs). The above device has been optimized with TCAD simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ON and OFF state currents in nanometer regime than Single Metal DG MOSFETs.
Keywords :
MOSFET; high-k dielectric thin films; optimisation; TCAD simulations; diminished short channel effects; high-K dielectric; lightly-doped MOSFET; optimization; subthreshold swing; transconductance; triple metal double gate MOSFET; ultra-thin MOSFET; Dielectrics; Doping; High K dielectric materials; Logic gates; MOSFET circuits; Silicon; DG MOSFETs; high-K dielectrics; subthreshold swing;
Conference_Titel :
Computer and Communication Technology (ICCCT), 2011 2nd International Conference on
Conference_Location :
Allahabad
Print_ISBN :
978-1-4577-1385-9
DOI :
10.1109/ICCCT.2011.6075167
