Transconductance ramp effect in high-k triple gate sSOI nFinFETs

The gm ramp and the enhanced gm_max were observed experimentally in high-k triple gate FinFETs with large dimensions. The mobility degradation at the high-k interface and the early GIFBE are the main reasons for this unusual gm behavior. Parameter extraction which normally uses large devices has to be done carefully. For narrow devices gm returns to its usual shape.