Germanium MOS transistors on sapphire and alumina platforms

Author

Baine, P.T. ; Gamble, H.S. ; Armstrong, B.M. ; Mitchell, S.J.N. ; McNeill, D.W. ; Rainey, P.V. ; Low, Y.H. ; Low, Y.W. ; Tantraviwat, D.

Author_Institution

Northern Ireland Semicond. Res. Centre, Queen´´s Univ. Belfast, Belfast, UK

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650 cm²V^-1s^-1 has been achieved. Sub threshold slope, threshold voltage and carrier mobility have been characterised as a function of temperature. The technology has been successfully transferred to both germanium on sapphire and germanium on alumina substrates providing an ideal platform technology for system on a chip.

Keywords

MOSFET; alumina; cryogenic electronics; germanium; hot carriers; sapphire; semiconductor device manufacture; Al₂O₃; Ge; W gate germanium MOS transistors; alumina platforms; hole carrier mobility; low temperature process; sapphire platforms; subthreshold slope; system on a chip; threshold voltage; Germanium; Insulation; MOSFETs; Manufacturing processes; Silicon on insulator technology; Substrates; System-on-a-chip; Temperature dependence; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318767

Filename

5318767