LDMOS transistors on Si-on-SiC hybrid substrates having crystalline or poly-crystalline SiC - electrical and thermal characterization

First ever demonstration of LDMOS transistors on Sion-SiC hybrid substrates. No degradation in transistor performance as compared to conventional SOI. PolySiC is available in larger wafer sizes but seems to have slightly lower heat conductivity than crystalline SiC. The intermediate alpha-Si layer provides electrical advantages and does not form any thermal barriers.