DocumentCode :
2291629
Title :
Thermal sensing performance of lateral SOI PIN diodes in the 90–400 K range
Author :
de Souza, M. ; Rue, B. ; Flandre, D. ; Pavanello, M.A.
Author_Institution :
Centro Univ. da FEI, Sao Bernardo do Campo, Brazil
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
2
Abstract :
In this work the performance of SOI PIN diodes for the implementation of temperature sensors has been presented. Experimental results of diodes from two different technologies showed that the sensitivity and the range of temperature over which the response is fairly fitted by the existing model are affected by the forward current imposed to the diode. It has been shown that these diodes are suitable for the temperature sensing in a wide temperature range (from 90 to 400 K) and may reach high accuracy, with error smaller than 1 K depending on the temperature range and bias current.
Keywords :
p-i-n diodes; silicon-on-insulator; temperature sensors; forward current; lateral SOI PIN diodes; temperature 90 K to 400 K; temperature sensor; thermal sensing performance; Cryogenics; Length measurement; Semiconductor device doping; Semiconductor diodes; Sensor phenomena and characterization; Temperature control; Temperature distribution; Temperature measurement; Temperature sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318770
Filename :
5318770
Link To Document :
بازگشت