Thermal sensing performance of lateral SOI PIN diodes in the 90–400 K range

Author

de Souza, M. ; Rue, B. ; Flandre, D. ; Pavanello, M.A.

Author_Institution

Centro Univ. da FEI, Sao Bernardo do Campo, Brazil

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

In this work the performance of SOI PIN diodes for the implementation of temperature sensors has been presented. Experimental results of diodes from two different technologies showed that the sensitivity and the range of temperature over which the response is fairly fitted by the existing model are affected by the forward current imposed to the diode. It has been shown that these diodes are suitable for the temperature sensing in a wide temperature range (from 90 to 400 K) and may reach high accuracy, with error smaller than 1 K depending on the temperature range and bias current.

Keywords

p-i-n diodes; silicon-on-insulator; temperature sensors; forward current; lateral SOI PIN diodes; temperature 90 K to 400 K; temperature sensor; thermal sensing performance; Cryogenics; Length measurement; Semiconductor device doping; Semiconductor diodes; Sensor phenomena and characterization; Temperature control; Temperature distribution; Temperature measurement; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318770

Filename

5318770