Title :
Analyze of temporal and random variability of a 45nm SOI SRAM cell
Author_Institution :
ARM, Grenoble, France
Abstract :
This paper presents the analysis of a 45 nm SOI SRAM cell variability including history effects and random variability. This leads to an accurate margin calculation.
Keywords :
SRAM chips; silicon-on-insulator; statistical analysis; SOI SRAM cell variability; SRAM cell design; Si-SiO2; accurate margin calculation; generalized extreme value theory; random variability analysis; size 45 nm; statistical modeling; temporal variability analysis; Fluctuations; Helium; History; Libraries; Logic; Monitoring; Random access memory; Sociotechnical systems; Steady-state; Voltage;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318782
