• DocumentCode
    2291847
  • Title

    From silicon direct wafer bonding to surface nano-patterning: a way to innovative substrate elaboration

  • Author

    Fournel, F. ; Bavard, A. ; Eymery, J.

  • Author_Institution
    CEA, MINATEC, Grenoble, France
  • fYear
    2009
  • fDate
    5-8 Oct. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct twist wafer bonding and preferential chemical etching has been developed.
  • Keywords
    elemental semiconductors; etching; germanium; gold; island structure; nanopatterning; nanostructured materials; nickel; self-assembly; semiconductor growth; semiconductor thin films; silicon; silicon compounds; surface structure; wafer bonding; Au; Ge; Ni; Si-SiO2; SiO2; direct twist wafer bonding; nanostructures; preferential chemical etching; self-assembled configurations; substrate; surface nanopatterning; Chemical technology; Etching; Microelectronics; Nanopatterning; Nanostructures; Semiconductor films; Silicon; Size control; Substrates; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2009 IEEE International
  • Conference_Location
    Foster City, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-4256-0
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2009.5318788
  • Filename
    5318788