DocumentCode
2291847
Title
From silicon direct wafer bonding to surface nano-patterning: a way to innovative substrate elaboration
Author
Fournel, F. ; Bavard, A. ; Eymery, J.
Author_Institution
CEA, MINATEC, Grenoble, France
fYear
2009
fDate
5-8 Oct. 2009
Firstpage
1
Lastpage
4
Abstract
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct twist wafer bonding and preferential chemical etching has been developed.
Keywords
elemental semiconductors; etching; germanium; gold; island structure; nanopatterning; nanostructured materials; nickel; self-assembly; semiconductor growth; semiconductor thin films; silicon; silicon compounds; surface structure; wafer bonding; Au; Ge; Ni; Si-SiO2; SiO2; direct twist wafer bonding; nanostructures; preferential chemical etching; self-assembled configurations; substrate; surface nanopatterning; Chemical technology; Etching; Microelectronics; Nanopatterning; Nanostructures; Semiconductor films; Silicon; Size control; Substrates; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2009 IEEE International
Conference_Location
Foster City, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-4256-0
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2009.5318788
Filename
5318788
Link To Document