DocumentCode :
2291847
Title :
From silicon direct wafer bonding to surface nano-patterning: a way to innovative substrate elaboration
Author :
Fournel, F. ; Bavard, A. ; Eymery, J.
Author_Institution :
CEA, MINATEC, Grenoble, France
fYear :
2009
fDate :
5-8 Oct. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Self-assembled configurations of nanostructures are expected to play an increasingly important role in devices design, as an alternative to conventional microelectronics technology. Conventional techniques are generally limited by the lack of simultaneous control on positioning, density and size uniformity of the nanostructures. To overcome these problems a new substrate based on controlled direct twist wafer bonding and preferential chemical etching has been developed.
Keywords :
elemental semiconductors; etching; germanium; gold; island structure; nanopatterning; nanostructured materials; nickel; self-assembly; semiconductor growth; semiconductor thin films; silicon; silicon compounds; surface structure; wafer bonding; Au; Ge; Ni; Si-SiO2; SiO2; direct twist wafer bonding; nanostructures; preferential chemical etching; self-assembled configurations; substrate; surface nanopatterning; Chemical technology; Etching; Microelectronics; Nanopatterning; Nanostructures; Semiconductor films; Silicon; Size control; Substrates; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2009.5318788
Filename :
5318788
Link To Document :
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