Title :
Demonstration of low temperature CMOS devices on SiOG and SOI substrates
Author :
Williams, C. Kosik ; Couillard, J.G. ; Senawiratne, J. ; Manley, R.G. ; Meller, P.M. ; Shea, C.G. ; McCabe, A.M. ; Hirschman, K.D.
Author_Institution :
Corning Inc., Corning, NY, USA
Abstract :
The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fabricated on SOI (SIMOX) with respect to carrier mobility and off-state leakage current. SiOG is viewed as a platform with potential applications in advanced flat panel mobile display modules as well as low-cost, medium performance ASICs.
Keywords :
CMOS integrated circuits; carrier mobility; cryogenic electronics; leakage currents; semiconductor doping; CMOS IC; CMOS device fabrication; SIMOX; Si-SiO2; carrier mobility; low temperature CMOS device; off-state leakage current; silicon doping; CMOS process; CMOS technology; Dielectric substrates; Etching; Fabrication; Glass; Implants; Silicon; Temperature; Thin film transistors;
Conference_Titel :
SOI Conference, 2009 IEEE International
Conference_Location :
Foster City, CA
Print_ISBN :
978-1-4244-4256-0
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2009.5318791
