Demonstration of low temperature CMOS devices on SiOG and SOI substrates

Author

Williams, C. Kosik ; Couillard, J.G. ; Senawiratne, J. ; Manley, R.G. ; Meller, P.M. ; Shea, C.G. ; McCabe, A.M. ; Hirschman, K.D.

Author_Institution

Corning Inc., Corning, NY, USA

fYear

2009

fDate

5-8 Oct. 2009

Firstpage

1

Lastpage

2

Abstract

The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fabricated on SOI (SIMOX) with respect to carrier mobility and off-state leakage current. SiOG is viewed as a platform with potential applications in advanced flat panel mobile display modules as well as low-cost, medium performance ASICs.

Keywords

CMOS integrated circuits; carrier mobility; cryogenic electronics; leakage currents; semiconductor doping; CMOS IC; CMOS device fabrication; SIMOX; Si-SiO₂; carrier mobility; low temperature CMOS device; off-state leakage current; silicon doping; CMOS process; CMOS technology; Dielectric substrates; Etching; Fabrication; Glass; Implants; Silicon; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2009 IEEE International

Conference_Location

Foster City, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-4256-0

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2009.5318791

Filename

5318791