Title :
Compound semiconductor nanowires for optoelectronic device applications
Author :
Gao, Q. ; Joyce, H. ; Paiman, S. ; Kang, J.H. ; Tan, H.H. ; Jackson, H.E. ; Smith, L.M. ; Yarrison-Rice, J.M. ; Zou, Jin ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy.
Keywords :
III-V semiconductors; MOCVD; Raman spectroscopy; carrier lifetime; crystal structure; gallium arsenide; indium compounds; nanowires; optoelectronic devices; photoluminescence; semiconductor quantum wires; transmission electron microscopy; GaAs; InP; bandgap energy; carrier lifetime; compound semiconductor nanowires; crystal structure; metal organic chemical vapor deposition; micro-Raman spectroscopy; nanowire heterostructures; optoelectronic devices; strain effects; time-resolved photoluminescence; transmission electron microscopy; vapor-liquid-solid mechanism; Crystals; Gallium arsenide; Gold; Indium phosphide; Nanowires; Strain;
Conference_Titel :
Information Photonics (IP), 2011 ICO International Conference on
Conference_Location :
Ottawa, ON
Print_ISBN :
978-1-61284-315-5
DOI :
10.1109/ICO-IP.2011.5953760
