• DocumentCode
    2295340
  • Title

    Towards Si-based electrically injected group-IV lasers

  • Author

    Sun, Greg

  • Author_Institution
    Dept. of Phys., Univ. of Massachusetts Boston, Boston, MA, USA
  • fYear
    2011
  • fDate
    18-20 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Approaches towards Si-based lasers are discussed using lattice-matched group-IV heterostructures that can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Several strain-free designs are presented that include Ge/GeSiSn quantum cascade structure, GeSn/GeSiSn double heterostructure, and GeSn/GeSiSn multiple quantum wells.
  • Keywords
    germanium compounds; quantum cascade lasers; quantum well lasers; silicon compounds; Ge-GeSiSn; GeSn-GeSiSn; buffer layers; double heterostructure; lattice-matched group-IV heterostructures; multiple quantum wells; quantum cascade structure; strain-free design; DH-HEMTs; Lattices; Quantum cascade lasers; Silicon; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Photonics (IP), 2011 ICO International Conference on
  • Conference_Location
    Ottawa, ON
  • Print_ISBN
    978-1-61284-315-5
  • Type

    conf

  • DOI
    10.1109/ICO-IP.2011.5953769
  • Filename
    5953769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2295340