مرکز منطقه ای اطلاع رساني علوم و فناوري - Crystalline ZrTiO<formula formulatype="inline"> <img src="/images/tex/18678.gif" alt="_{\\bf 4}"> </formula>-Gated Ge Metal–Oxide–Semiconductor Devices With Amorphous Yb<formula formulatype="inline"> <img src="/images/tex/996.gif" alt="

Title :

Crystalline ZrTiO $_{\\bf 4}$ -Gated Ge Metal–Oxide–Semiconductor Devices With Amorphous Yb $_{\\b</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Min-Lin Wu ; Yung-Hsien Wu ; Chun-Yen Chao ; Chia-Chun Lin ; Chao-Yi Wu</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>12</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Nov. 2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1018</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1021</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>An amorphous Yb<sub>2</sub>O<sub>3</sub> passivation layer integrated with a crystalline ZrTiO<sub>4</sub> film was explored as the advanced gate stack for Ge MOS devices. The ZrTiO<sub>4</sub>/Yb<sub>2</sub>O<sub>3</sub> gate stack demonstrates Dit of 2.4 × 10<sup>11</sup> cm<sup>-2</sup>· eV<sup>-1</sup> and EOT down to 0.76 nm which are, respectively, due to the formation of an interfacial YbGeO<sub>x</sub> layer that well passivates the dangling bonds at Ge surface and the adoption of a crystalline ZrTiO<sub>4</sub> film with a κ value of 45.6. The gate stack also shows low leakage current, tight distribution of device parameters, and desirable reliability performance, paving an alternative avenue to develop high-performance Ge MOS devices.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; leakage currents; passivation; semiconductor device reliability; titanium compounds; ytterbium compounds; zirconium compounds; MOS devices; Yb<sub>2</sub>O<sub>3</sub>; YbGeO; ZrTiO<sub>4</sub>; crystalline film; dangling bonds; gate stack; leakage current; metal-oxide-semiconductor devices; passivation layer; reliability performance; Annealing; Dielectrics; Films; Leakage currents; Logic gates; MOS devices; Passivation; Crystalline ZrTiO<formula formulatype=$ $_4$; EOT; Ge passivation; Yb$_2$O$_3$ ; high-k; interface trap density; leakage current; reliability;