Title :
The high speed ternary logic gates based on the multiple β transistors
Author :
Shoujue, Wang ; Xunwei, WU ; Hongjuan, Feng
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
The paper develops a kind of multiple β transistor based on the multiple emitter transistor whose emitter has different current gain β. It then presents the design of the linear AND/OR gates and multi valued literal circuits. These two kinds of circuits have not only simple structures but also very high operating speeds so that they can be utilized to the design of the high speed multi valued logic circuits.
Keywords :
logic gates; multivalued logic circuits; ternary logic; transistors; current gain; high speed multi valued logic circuits; high speed ternary logic gates; linear AND/OR gates; multi valued literal circuits; multiple β transistors; multiple emitter transistor; Bipolar transistor circuits; Boron; Circuit synthesis; Diodes; Equations; Logic design; Logic functions; Manufacturing; Multivalued logic; Voltage;
Conference_Titel :
Multiple-Valued Logic, 1995. Proceedings., 25th International Symposium on
Print_ISBN :
0-8186-7118-1
DOI :
10.1109/ISMVL.1995.513528
