DocumentCode
2296311
Title
Large extinction ratio 10 Gbit/s silicon optical modulator based on a reverse biased PIPIN diode
Author
Ziebell, Melissa ; Rasigade, Gilles ; Marris-morini, Delphine ; Fédéli, Jean-Marc ; Milesi, Frédéric ; Grosse, Philippe ; Cassan, Éric ; Vivien, Laurent
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fYear
2011
fDate
18-20 May 2011
Firstpage
1
Lastpage
2
Abstract
Experimental results of a high-speed silicon optical modulator based on carrier depletion in a pipin diode are presented. 10 Gbit/s data transmission is obtained, with high extinction ratio (ER) of 8.1 dB and low insertion loss (IL) of ~6 dB.
Keywords
data communication; elemental semiconductors; extinction coefficients; optical losses; optical modulation; p-i-n diodes; silicon; Si; bit rate 10 Gbit/s; carrier depletion; data transmission; extinction ratio; high-speed silicon optical modulator; insertion loss; reverse biased PIPIN diode; silicon optical modulator; High speed optical techniques; Optical device fabrication; Optical interferometry; Optical modulation; Optical ring resonators; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Photonics (IP), 2011 ICO International Conference on
Conference_Location
Ottawa, ON
Print_ISBN
978-1-61284-315-5
Type
conf
DOI
10.1109/ICO-IP.2011.5953821
Filename
5953821
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