Title :
Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor
Author :
Yi-Jiun Chen ; Kuan-Chang Chang ; Ting-Chang Chang ; Hsin-Lu Chen ; Tai-Fa Young ; Tsung-Ming Tsai ; Rui Zhang ; Tian-Jian Chu ; Jian-Fa Ciou ; Jen-Chung Lou ; Kai-Huang Chen ; Jung-Hui Chen ; Jin-Cheng Zheng ; Sze, Simon M.
Author_Institution :
Dept. of Mech. & Electro-Mech. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory (RRAM) and two opposite stacking double-layer DLC/HfO2 RRAMs were prepared to investigate the resistance switching mechanism of DLC-based memristors. The RRAM devices were fabricated by sandwiching the active-layers between Pt top and TiN bottom electrodes. Based on the analyses for Pt/DLC/TiN and Pt/DLC/HfO2/TiN structures, we demonstrated the resistance switching in DLC RRAM is induced by hydrogen reaction near the Pt electrode. In addition, the resistance switching in Pt/HfO2/DLC/TiN structure is attributed to oxygen reaction near the TiN electrode. Based on the results of HfO2 stacked with DLC devices, we demonstrated for the first time the resistance switching of DLC at inactive electrode side (Pt) and active electrode side (TiN) is attributed to hydrogen and oxygen-induced redox of C-C bonds, respectively.
Keywords :
diamond-like carbon; hafnium compounds; memristors; platinum; random-access storage; titanium compounds; DLC RRAM; DLC-based memristors; Pt-C-HfO2-TiN; RRAM device fabrication; active electrode side; carbon-carbon bonds; diamond-like carbon memristor; hydrogen reaction; hydrogen-induced redox; inactive electrode side; oxygen reaction; oxygen-induced redox; platinum top electrode; resistance switching mechanism; resistive random access memory; single-layer diamond-like carbon RRAM; stacking double-layer RRAM; titanium nitride bottom electrode; Educational institutions; Electrodes; Hafnium compounds; Hydrogen; Resistance; Switches; Tin; DLC; HfO₂; HfO2; RRAM; hydrogen; oxygen;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2343331
