Title :
Simulation studies of current voltage characteristics of inhomogeneous Schottky diode with discrete distribution of barrier heights
Author_Institution :
Dept. of Appl. Sci. & Humanities, Nat. Inst. of Technol., Hamirpur
Abstract :
The current voltage characteristics of inhomogeneous Schottky contact with discrete Gaussian distribution of barrier heights are simulated considering thermionic emission diffusion theory. The diode parameters are extracted by fitting of simulated current voltage data into thermionic emission diffusion current equation. The effect of discrete Gaussian distribution of barrier heights on barrier parameters like barrier height, ideality factor and activation energy plots are discussed.
Keywords :
Gaussian distribution; Schottky barriers; Schottky diodes; semiconductor device models; activation energy; barrier heights; current voltage characteristics; discrete Gaussian distribution; ideality factor; inhomogeneous Schottky diode; parameter extraction; thermionic emission diffusion theory; Contact resistance; Current-voltage characteristics; Gaussian distribution; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature dependence; Temperature distribution; Thermionic emission; Variable speed drives;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743300
