Title :
Surface control structures for high-performance AlGaN/GaN HEMTs
Author :
Hashizume, Tamotsu
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo
Abstract :
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process, an electrochemical oxidation and a multi-mesa-channel structure with relevant technologies.
Keywords :
aluminium compounds; electrochemistry; gallium compounds; high electron mobility transistors; oxidation; AlGaN-GaN; AlGaN/GaN HEMT; electrochemical oxidation; multimesa-channel structure; surface control; ultrathin-Al-layer process; Air gaps; Aluminum gallium nitride; Capacitance measurement; Density measurement; Electrodes; Gallium nitride; HEMTs; MODFETs; Oxidation; Reflectivity;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743308
