Some remarks to the nanowires grown on Ill-V substrate

In the present work nanowires are investigated, which were prepared with the help of encapsulated metal induced growth method on GaAs and InP substrate. As our former investigations show, we can receive nanowires with substrate-like composition in the case of InP. In the case of GaAs substrate the situation is entirely different, while the growth technology in both cases was the same. The difference between the nanoproducts in the cases of different substrates originate in the reactivity of the components, which is explained in the following considerations. Furthermore we have observed that the diameter of the nanowires depends on the electron energy of the irradiation. If the electron beam was 5 kV and 20 kV, the diameter lasting increases and decreases, respectively. This effect can be explained by the change of the nanowires structure influenced by the electron beam.