GHz Class Low-Power Flash ADC for Broadband Communications

Author

Sexton, J. ; Tauqeer, T. ; Mohiuddin, M. ; Missous, M.

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

235

Lastpage

238

Abstract

A low-power (~400 mW) high-speed (2-4 GS/s) 4-bit analogue-to-digital converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (420degC) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard digital signal processing (DSP) systems whilst dissipating only 400 mW.

Keywords

analogue-digital conversion; broadband networks; heterojunction bipolar transistors; stoichiometry; DSP systems; HBT; analogue-to-digital converter; broadband communications; digital signal processing; heterojunction bipolar transistors; low-power flash ADC; power 400 mW; stoichiometric conditions; temperature 420 degC; Broadband communication; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; High K dielectric materials; Indium gallium arsenide; Indium phosphide; Semiconductor materials; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743326

Filename

4743326