Laser heterostructures AlGaInAsSb/GaInSbAsP/GaSb(InAs) for middle infra-red range

Author

Kuchinskii, V.I. ; Vasil, V.I. ; Gagis, G.S. ; Deryagin, A.G. ; Dudelev, V.V.

Author_Institution

Ioffe Physico-Tech. Inst., St Petersburg, Russia

fYear

2003

fDate

19-20 Sept. 2003

Firstpage

76

Lastpage

78

Abstract

This work shows that pentanary solid solutions (PSS) AlGaInAsSb and GaInSbAsP isoperiodic to GaSb and InAs substrates give wide possibilities to control heterojunction parameters. Heterojunctions I, II and III types can be formed for the lightwave range λ=3-4μm. Valence and conductivity band offsets can be varied in a wide range at a constant energy gap of the active region. AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures were grown from Sb-rich melts by liquid phase epitaxy (LPE) method at 570-600 °C.

Keywords

III-V semiconductors; aluminium compounds; antimony compounds; arsenic compounds; gallium compounds; indium compounds; liquid phase epitaxial growth; optical fabrication; semiconductor lasers; substrates; 3 to 4 micron; 570 to 600 C; AlGaInAsSb; AlGaInAsSb/GaInSbAsP/GaSb(InAs) heterostructures; GaInSbAsP; GaSb; InAs; Sb-rich melts; active region energy gap; conductivity band offsets; heterojunction parameters; laser heterostructures; liquid phase epitaxy method; middle infra-red range; pentanary solid solutions; substrates; valence band offset; Epitaxial growth; Gas lasers; Heterojunctions; Optical materials; Optical pumping; Optical surface waves; Photonic band gap; Solids; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on

Print_ISBN

0-7803-7709-5

Type

conf

DOI

10.1109/LFNM.2003.1246079

Filename

1246079