DocumentCode :
2297248
Title :
Hole transport in the p-type RTD
Author :
Soban, Z. ; Voves, J. ; Cukr, M. ; Novák, V.
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ. in Prague, Prague
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
251
Lastpage :
254
Abstract :
Results of a RTD structure simulation by means of the nextnano3 [4] are shown. IV curve simulation by means wingreen program [3] and comparison with experimental results are presented in this paper. Our approach is based on the non-equilibrium green´s function (NEGF). We used the program Wingreen [3] only with the single band model apart for the heavy and light holes. We summarized the HH and LH transmissivity. The transmissivities and the local density of states are calculated by means of nextnano3 [4] using Contact Block Reduction methodfor the comparison. Our simulations can serve as the relatively fast estimate of the p-type RTD behavior. Our results are verified by the comparison with the experimental data measured on the MBE grown p-type RTD structures. Measured and simulated I-V characteristics for the p-RTD are shown in the Figure.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling diodes; AlAs-GaAs; I-V characteristics; density of states; hole transport; nonequilibrium Green function; p-type RTD; transmissivity; Effective mass; Gallium arsenide; Green´s function methods; Magnetoelectronics; Microelectronics; Molecular beam epitaxial growth; Physics; Resonant tunneling devices; Semiconductor devices; Variable speed drives;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
Type :
conf
DOI :
10.1109/ASDAM.2008.4743330
Filename :
4743330
Link To Document :
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