Hole transport in the p-type RTD

Results of a RTD structure simulation by means of the nextnano³ [4] are shown. IV curve simulation by means wingreen program [3] and comparison with experimental results are presented in this paper. Our approach is based on the non-equilibrium green´s function (NEGF). We used the program Wingreen [3] only with the single band model apart for the heavy and light holes. We summarized the HH and LH transmissivity. The transmissivities and the local density of states are calculated by means of nextnano³ [4] using Contact Block Reduction methodfor the comparison. Our simulations can serve as the relatively fast estimate of the p-type RTD behavior. Our results are verified by the comparison with the experimental data measured on the MBE grown p-type RTD structures. Measured and simulated I-V characteristics for the p-RTD are shown in the Figure.