A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

Author

Moon, Hyunwon ; Han, Juyoung ; Choi, Seung-Il ; Keum, Dongjin ; Park, Byeong-Ha

Author_Institution

MSC Design Team, Samsung Electron., South Korea

fYear

2009

fDate

7-9 June 2009

Firstpage

17

Lastpage

20

Abstract

A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by realizing the multi-band multi-mode RF transceiver. The measured full-path receiver performance is NF of < 3 dB, IIP3 of > -17 dBm, and IIP2 of > +30 dBm for all six bands. Its current consumption including frequency synthesizer is 45 mA at 2.8 V supply.

Keywords

CMOS integrated circuits; code division multiple access; elemental semiconductors; frequency synthesizers; radio receivers; silicon; transceivers; 3GPP bands; CMOS multi-band WCDMA/HSDPA receiver; current 45 mA; frequency synthesizer; inner diameter and; integrated inductor structure; mixed-type DC offset correction technique; multi-band WCDMA/HSDPA direct-conversion receiver; multi-band multi-mode RF transceiver; silicon area reducing techniques; size 0.13 mum; voltage 2.8 V; Baseband; CMOS process; Frequency synthesizers; Inductors; Low pass filters; Low-noise amplifiers; Multiaccess communication; Radio frequency; Silicon; Transceivers; CMOS; DCOC; WCDMA/HSDPA; direct-conversion; inductor; multi-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135480

Filename

5135480