A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by realizing the multi-band multi-mode RF transceiver. The measured full-path receiver performance is NF of < 3 dB, IIP3 of > -17 dBm, and IIP2 of > +30 dBm for all six bands. Its current consumption including frequency synthesizer is 45 mA at 2.8 V supply.