Current combining 60GHz CMOS power amplifiers

Author

Bohsali, Mounir ; Niknejad, Ali M.

Author_Institution

Berkeley Wireless Res. Center (BWRC), UC Berkeley, Berkeley, CA, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

31

Lastpage

34

Abstract

Two 60 GHz power amplifiers are presented in standard 90 nm CMOS using integrated power combining and matching networks. The power amplifiers incorporate 4-way/2-way power splitters and combiners into their matching networks rather than using separate structures, and achieve 1 dB output power of 12.1/10.1 dBm and saturation output power of 14.2/11.6 dBm respectively with saturation efficiency of 18.1/17.7% respectively when operated with a 1 V supply.

Keywords

CMOS integrated circuits; millimetre wave power amplifiers; power combiners; 2-way power splitters; 4-way power splitters; CMOS power amplifier; frequency 60 GHz; power combiners; power combining network; power matching network; saturation efficiency; size 90 nm; voltage 1 V; Capacitance; Design optimization; Fingers; Impedance matching; Inductance; Insertion loss; Power amplifiers; Power combiners; Power generation; Power transmission lines; 60GHz; mm-wave; power amplifiers; power combiners;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135483

Filename

5135483