Title :
Current combining 60GHz CMOS power amplifiers
Author :
Bohsali, Mounir ; Niknejad, Ali M.
Author_Institution :
Berkeley Wireless Res. Center (BWRC), UC Berkeley, Berkeley, CA, USA
Abstract :
Two 60 GHz power amplifiers are presented in standard 90 nm CMOS using integrated power combining and matching networks. The power amplifiers incorporate 4-way/2-way power splitters and combiners into their matching networks rather than using separate structures, and achieve 1 dB output power of 12.1/10.1 dBm and saturation output power of 14.2/11.6 dBm respectively with saturation efficiency of 18.1/17.7% respectively when operated with a 1 V supply.
Keywords :
CMOS integrated circuits; millimetre wave power amplifiers; power combiners; 2-way power splitters; 4-way power splitters; CMOS power amplifier; frequency 60 GHz; power combiners; power combining network; power matching network; saturation efficiency; size 90 nm; voltage 1 V; Capacitance; Design optimization; Fingers; Impedance matching; Inductance; Insertion loss; Power amplifiers; Power combiners; Power generation; Power transmission lines; 60GHz; mm-wave; power amplifiers; power combiners;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135483
