Title :
60GHz 45nm PA for linear OFDM signal with predistortion correction achieving 6.1% PAE and −28dB EVM
Author :
Cohen, Emanuel ; Ravid, Shmuel ; Ritter, Dan
Author_Institution :
Mobile Wireless Group, Intel Haifa, Haifa, Israel
Abstract :
A 45 nm CMOS 60 GHz PA optimized for linear modulation with 6 dbm saturated power and 13 dB gain is presented when biased at 70uA/um. A maximum power added efficiency (PAE) of 19.4% 8 dBm Psat and 18 dB gain is achieved for 200 uA/um bias point. The PA was tested using a predistortion algorithm and OFDM packets, and achieved PAE of 6.1% with -28 dB EVM and 9% with -20 dB EVM at output powers of -2 dBm and +1 dBm respectively. To our knowledge this is the first publication of a 45 nm PA design analyzing the tradeoff between EVM and PAE at the 60 GHz frequency range and using predistortion algorithms to boost efficiency and power.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; OFDM modulation; distortion; CMOS; frequency 60 GHz; linear OFDM signal; power added efficiency; predistortion correction; size 45 nm; Algorithm design and analysis; Antenna arrays; CMOS process; CMOS technology; Inductors; OFDM; Phase noise; Phased arrays; Predistortion; Radio frequency; 60 GHz; EVM; OFDM; PA; Predistortion;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135484