60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology

60 GHz and 80 GHz-band power amplifier (PA) MMICs have been developed on a standard 90nm CMOS technology for use in RF front-ends of wide-band, low-cost communication and/or radar systems. A 60 GHz three-stage PA and a 80 GHz five-stage PA, both with single-ended architecture, have demonstrated saturated output powers of 12.6 dBm and 10.3 dBm with linear gains of 10.0 dB and 12.2 dB, respectively, the highest P_sat´s reported to our best knowledge, under a 1.0 V power supply voltage. The PA´s were designed with systematically shifted cut-off frequencies of individual high-pass-type matching circuits to simultaneously achieve wide-band operations, resulting in demonstrated 1dB-gain bandwidth of 17 GHz (55 GHz to 72 GHz), and 19 GHz (66 GHz to 85 GHz), respectively.