Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors

Author

Tauqeer, T. ; Sexton, J. ; Amir, F. ; Missous, M.

Author_Institution

Sch. of Electr. Eng. & Electron., Univ. of Manchester, Manchester

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

271

Lastpage

274

Abstract

State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (420degC) while conserving extremely high quality materials. A self-aligned transistor with an emitter area of 5times5 mum² demonstrated a low offset voltage of 150 mV and high current gain of 90. An excellent agreement with the measured data was achieved using physical modelling packages developed by SILVACO.

Keywords

gallium compounds; heterojunction bipolar transistors; indium compounds; GaP; HBT; InP; SILVACO; decomposition source; dimeric phosphorus; heterojunction bipolar transistors; self-aligned transistor; temperature 420 degC; two-dimensional numerical modelling; two-dimensional physical modelling; voltage 150 mV; Analytical models; Charge carrier processes; Doping; Electron mobility; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Numerical models; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743335

Filename

4743335