Title :
PECVD Silicon Carbon Nitrid Thin Films: Properties
Author :
Bohacek, P. ; Huran, J. ; Kobzev, A.P. ; Balalykin, N.I. ; Pezoltd, J.
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava
Abstract :
Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. The electrical properties of SiCN films were determined by I-V measurement.
Keywords :
Rutherford backscattering; plasma CVD; silicon compounds; spectrochemical analysis; thin films; PECVD; RBS; Rutherford backscattering spectrometry; SiCN; chemical compositions; elastic recoil detection; electrical properties; hydrogen concentration; infrared spectroscopy; plasma enhanced chemical vapour deposition; silicon carbon nitride; thin films; Backscatter; Chemical analysis; Chemical vapor deposition; Infrared spectra; Plasma chemistry; Plasma properties; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743340
