Influence of relativistic and quantum effects on the blur in projection lithography systems

Author

Roshchupkin, S.P. ; Storizhko, V.E. ; Denisenko, O.I. ; Voroshilo, A.I. ; Starodub, S.S. ; Nedoreshta, V.N. ; Sulkio-Cleff, B.

Author_Institution

Appl. Phys. Inst., Nat. Acad. of Sci. of Ukraine, Sumy, Ukraine

fYear

2003

fDate

19-20 Sept. 2003

Firstpage

122

Lastpage

124

Abstract

Classical and quantum effects producing changes in the blur for electronand- ion (H⁺ and He⁺) projection lithography are theoretically considered. Typically, the systems studied in this report operate with beam current up to 200 μA and beam voltage up to 200 keV. The influence of a strong laser field on the interaction of beam particles into crossover is theoretically investigated. It is predicted, that for intensities of a laser field and for defined parameters of a beam, the effective potential of interaction of beam particles becomes a potential of attraction. It is shown, that this effect allows correcting the blur effect. The influence of quantum effects into crossover on blur is theoretically studied. It is shown, that for sufficiently strong currents and close-cut beams, the corrections due to quantum effects into crossover can have essential influence on blur.

Keywords

electron beam lithography; electron beams; ion beam lithography; ion beams; laser beams; quantum optics; relativistic quantum mechanics; 200 keV; 200 muA; H⁺; He⁺; beam particles interaction; blur effect; crossover; electron projection lithography; ion projection lithography; laser field; quantum effects; relativistic effects; Current density; Integral equations; Lithography; Nuclear physics; Particle beams; Quantum mechanics; Space charge; Stochastic processes; Stochastic systems; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on

Print_ISBN

0-7803-7709-5

Type

conf

DOI

10.1109/LFNM.2003.1246096

Filename

1246096