• DocumentCode
    2297594
  • Title

    Constant Voltage Stress Induced Current in Ta2O5 Stacks

  • Author

    Atanassova, E. ; Paskaleva, A. ; Spassov, D.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    59
  • Lastpage
    62
  • Abstract
    Response of Ta2O5 stacks with Al and Au gates to voltage stress at gate injection is studied by probing at various voltage/time conditions. The pre-existing traps govern this response, and the impact of gate-induced defects is stronger. Two processes, electron trapping at pre-existing traps and positive charge build-up, are suggested to be responsible for generation of stress-induced leakage current. The origin of CVS degradation is different from that in SiO2.
  • Keywords
    dielectric materials; leakage currents; silicon compounds; tantalum compounds; SiO2; Ta2O5; constant voltage stress; electron trapping; gate injection; positive charge build-up; stress-induced leakage current; Capacitors; Electrodes; Electron traps; Gold; High K dielectric materials; High-K gate dielectrics; Stress measurement; Thermal degradation; Thermal stresses; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-2325-5
  • Electronic_ISBN
    978-1-4244-2326-2
  • Type

    conf

  • DOI
    10.1109/ASDAM.2008.4743358
  • Filename
    4743358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2297594