Title :
Constant Voltage Stress Induced Current in Ta2O5 Stacks
Author :
Atanassova, E. ; Paskaleva, A. ; Spassov, D.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia
Abstract :
Response of Ta2O5 stacks with Al and Au gates to voltage stress at gate injection is studied by probing at various voltage/time conditions. The pre-existing traps govern this response, and the impact of gate-induced defects is stronger. Two processes, electron trapping at pre-existing traps and positive charge build-up, are suggested to be responsible for generation of stress-induced leakage current. The origin of CVS degradation is different from that in SiO2.
Keywords :
dielectric materials; leakage currents; silicon compounds; tantalum compounds; SiO2; Ta2O5; constant voltage stress; electron trapping; gate injection; positive charge build-up; stress-induced leakage current; Capacitors; Electrodes; Electron traps; Gold; High K dielectric materials; High-K gate dielectrics; Stress measurement; Thermal degradation; Thermal stresses; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743358
