Title :
Si3N4 based non-volatile memory structures with embedded Si nanocrystals
Author :
Basa, P. ; Horváth, Zs J. ; Jászi, T. ; Pap, A.E. ; Molnár, G. ; Kovalev, A. ; Wainstein, D. ; Turmezei, P.
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest
Abstract :
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of plusmn15 V, 10 ms.
Keywords :
CVD coatings; nanostructured materials; random-access storage; silicon compounds; Si3N4; embedded Si nanocrystals; low pressure chemical vapour deposition; non-volatile memory structures; Chemical technology; FETs; Materials science and technology; Nanocrystals; Nonvolatile memory; SONOS devices; Thickness control; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743359
