Si3N4 based non-volatile memory structures with embedded Si nanocrystals

Author

Basa, P. ; Horváth, Zs J. ; Jászi, T. ; Pap, A.E. ; Molnár, G. ; Kovalev, A. ; Wainstein, D. ; Turmezei, P.

Author_Institution

Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

63

Lastpage

66

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si₃N₄ control layer and SiO₂ or Si₃N₄ tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of plusmn15 V, 10 ms.

Keywords

CVD coatings; nanostructured materials; random-access storage; silicon compounds; Si₃N₄; embedded Si nanocrystals; low pressure chemical vapour deposition; non-volatile memory structures; Chemical technology; FETs; Materials science and technology; Nanocrystals; Nonvolatile memory; SONOS devices; Thickness control; Threshold voltage; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743359

Filename

4743359