Title :
A two-channel Ku-band BiCMOS digital beam-forming receiver for polarization-agile phased-array applications
Author :
Cetinoneri, Berke ; Atesal, Yusuf A. ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
A 15 GHz two-channel receiver is presented for digital beam-forming applications. The receiver is based on a dual-down-conversion architecture for interference mitigation and results in a channel gain (I and Q paths) of 47.1 dB centered at 15 GHz, with an instantaneous bandwidth of 170 MHz. A 2-bit gain control (0-16 dB) is also provided at the IF stage. The measured NF is 3.1 dB and is independent of the gain state. The measured OP1dB is -11 dBm and the input P1dB is -57 to -41 dBm depending on the gain, and is ideal for satellite applications. The channel-to-channel coupling is <-48 dB. The chip is built using a 0.18-mum SiGe BiCMOS process, has ESD protection diodes on the RF and DC pads, consumes 70 mA per channel from a 3.3 V power supply and is 2.6times2.2 mm2, including all pads. To our knowledge, this is the first high-performance Ku-band beam-forming chip in SiGe BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MMIC; microwave receivers; radiofrequency interference; satellite communication; semiconductor materials; BiCMOS technology; DC pads; ESD protection diodes; RF pads; SiGe; bandwidth 170 MHz; channel gain; channel-to-channel coupling; dual-down-conversion architecture; frequency 15 GHz; gain; gain 0 dB to 16 dB; gain 47.1 dB; interference mitigation; polarization-agile phased-array applications; power supply; satellite receivers; size 0.18 mum; two-channel Ku-band BiCMOS digital beam-forming receiver; voltage 3.3 V; Bandwidth; BiCMOS integrated circuits; Gain control; Gain measurement; Germanium silicon alloys; Interference; Noise measurement; Polarization; Semiconductor device measurement; Silicon germanium; Digital beam-forming; Ku-band; SiGe; phased arrays; satellite receivers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135505