Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

Author

Bouloukou, A. ; Boudjelida, B. ; Sobih, A. ; Boulay, S. ; Sly, J. ; Missous, M.

Author_Institution

Sch. of Electron. & Electr. Eng., Univ. of Manchester, Manchester

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

79

Lastpage

82

Abstract

This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 muA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices.

Keywords

III-V semiconductors; UHF amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; wideband amplifiers; InGaAs-InAlAs; UHF amplifier; frequency 300 MHz to 2 GHz; indium concentration; low frequency LNA; low leakage pHEMT; low-noise devices; wideband LNA; Fabrication; Indium compounds; Indium gallium arsenide; Leakage current; Low-frequency noise; PHEMTs; Photonic band gap; Radio astronomy; Radio frequency; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743363

Filename

4743363