Title :
Lasing and light amplification in photonic crystal heterostructures
Author :
Ushakov, D.V. ; Kononenko, V.K.
Author_Institution :
Belarussian State Univ., Minsk, Belarus
Abstract :
Properties of one-dimensional heterostructures having a photonic band gap in the near infrared range are examined and novel photonic crystals with n-i-p-i superlattices in the GaAs-GaxIn1-xP system are designed. Performance characteristics of the photonic crystal heterostructures are calculated and effects of gain saturation in the active n-i-p-i layers are investigated. Light amplification at the transmission and reflection in the photonic band gap region is analyzed and peculiarities of the emission at the defect mode are established.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; light reflection; optical multilayers; photonic band gap; photonic crystals; semiconductor lasers; semiconductor superlattices; GaAs-GaxIn1-xP system design; GaAs-GaInP; defect mode; gain saturation; light amplification; n-i-p-i superlattices; near infrared range; photonic band gap; photonic crystal heterostructures; reflection; Doping; Electron optics; Optical reflection; Optical refraction; Optical saturation; Optical superlattices; Optical variables control; Photonic band gap; Photonic crystals; Stimulated emission;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on
Print_ISBN :
0-7803-7709-5
DOI :
10.1109/LFNM.2003.1246113
