Title :
Low-temperature hole mobility in rolled-up Si/SiGe heterostructures
Author :
Demarina, N.V. ; Gruetzmacher, D.A.
Author_Institution :
Nizhnij Novgorod State Univ., Nizhnij Novgorod
Abstract :
We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times104 cm2/Vs.
Keywords :
Ge-Si alloys; Monte Carlo methods; field effect transistors; high electron mobility transistors; interface roughness; semiconductor materials; Monte Carlo method; Si-SiGe; field-effect transistor; interface roughness scattering; low-temperature hole mobility; Capacitive sensors; Charge carriers; Effective mass; Epitaxial layers; Germanium silicon alloys; Lattices; Poisson equations; Scattering; Silicon germanium; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
Electronic_ISBN :
978-1-4244-2326-2
DOI :
10.1109/ASDAM.2008.4743367
