Title :
A 25-dBm high-efficiency digitally-modulated SOI CMOS power amplifier for multi-standard RF polar transmitters
Author :
Pornpromlikit, Sataporn ; Jeong, Jinho ; Presti, Calogero D. ; Scuderi, Antonino ; Asbeck, Peter M.
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
A single-ended digitally-modulated power amplifier (DPA) is demonstrated in a 0.13-mum 1.2-V SOI CMOS technology, to be used in a multistandard RF polar transmitter. The amplitude modulation is done by digitally controlling the number of activated unit amplifiers whose currents are summed at the output. The DPA is designed for multi-mode multi-band functionality by avoiding frequency-selective components, except for the final-stage output matching network. The measured DPA is fully functioning and reliably delivers a 24.9-dBm peak output power at 900 MHz with a maximum power efficiency of 62.7%. It also exhibits similar high-efficiency performance for other carrier frequencies with a reconfigured matching network.
Keywords :
CMOS integrated circuits; power amplifiers; radio transmitters; silicon-on-insulator; SOI CMOS power amplifier; amplitude modulation; efficiency 62.7 percent; frequency 900 MHz; multimode multiband functionality; multistandard RF polar transmitters; size 0.13 mum; voltage 1.2 V; Amplitude modulation; CMOS technology; Digital control; High power amplifiers; Impedance matching; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Transmitters; CMOS; Polar transmitter; RF power amplifier; SOI; multi-standard; silicon-oninsulator;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135512
