Abstract :
The following topics are dealt with: carbon nanotube FETs; GaN-HEMTs reliability; lll-V MOSFET semiconductor; AIGaAs/GaAs Gunn diode; InGaAs/lnAIAs pHEMTs; Sb3N4 based non-volatile memory structures; photodiode-based CMOS APS; NMOS; PMOS translinear multiplying cell; Si/SiGe heterostructures;optical sensor; Schottky diodes; electrical behaviour; DRAM application; plasma-enhanced chemical vapor deposition; wireless sensor network; vertical velocity measurement; ESD protection devices; IGBTchip; A/D converter; edge-emitting laser diode; TiO2 thin films; integrated circuits modelling; field effect transistor structures; electrical properties; electro-optical monitoring; semiconductor preparation; ohmic contact metallization; circuit simulation; and semi-insulating GaAs radiation detectors preliminary testing.
Keywords :
CMOS integrated circuits; DRAM chips; Ge-Si alloys; Gunn diodes; III-VI semiconductors; aluminium compounds; carbon nanotubes; circuit simulation; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit design; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; ohmic contacts; surface emitting lasers; wireless sensor networks; A/D converter; AlGaAs-GaAs; DRAM; Gunn diode; HEMT reliability; IGBTchip; InGaAs-InAlAs; NMOS; PMOS translinear multiplying cell; Sb3N4; Schottky diodes; Si-SiGe; TiO2; carbon nanotube FET; circuit simulation; edge-emitting laser diode; nonvolatile memory structures; ohmic contact metallization; optical sensor; plasma-enhanced chemical vapor deposition; Circuit testing; Gallium arsenide; Gunn devices; Integrated circuit modeling; MOSFET circuits; Plasma properties; Schottky diodes; Semiconductor device reliability; Thin film sensors; Wireless sensor networks;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-2325-5
DOI :
10.1109/ASDAM.2008.4743370
