DocumentCode :
2297797
Title :
Mosaic placement of very high density 3D capacitors for efficient decoupling functionality in the RF domain
Author :
Tesson, O. ; Le Cornec, F. ; Jacqueline, S.
Author_Institution :
NXP Semicond., Caen, France
fYear :
2009
fDate :
7-9 June 2009
Firstpage :
175
Lastpage :
178
Abstract :
In this paper, we present a layout driven approach used to fill empty space within MCM, with 3D high density decoupling capacitors. In a first time, a description of the innovative 3D unit cell is done based on process considerations. Then the method including the whole design flow is described and validated with the help of specific test cases and RF characterization data up to 6 GHz. A physical model is also proposed and implemented in the flow. The correlation between measurements and simulation data is found satisfactory and allows validating the proposed approach.
Keywords :
capacitors; elemental semiconductors; integrated circuit layout; integrated circuit packaging; monolithic integrated circuits; multichip modules; radiofrequency integrated circuits; silicon; 3D unit cell; RF MCM; RF characterization; Si; decoupling functionality; empty space filling; layout driven method; mosaic placement; multichip modules; physical model; silicon embedded decoupling capacitors; very high density 3D capacitors; Electromagnetic interference; Inductance; MOS capacitors; Packaging; Power distribution; Radio frequency; Silicon; Space technology; Testing; White spaces; Capacitance measurements; Capacitors; Decoupling of systems; Modeling; Multichip modules;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2009.5135516
Filename :
5135516
Link To Document :
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