DocumentCode
2297819
Title
Ferroelectric memory evaluation and development system
Author
Bondurant, David W.
fYear
1991
fDate
20-24 May 1991
Firstpage
308
Abstract
Attention is given to the Ramtron FED-1, and IBM PC/AT compatible single-board 16-b microcomputer with 8-kbyte program/data memory implemented with nonvolatile ferroelectric dynamic RAM. This is the first demonstration of a new type of solid state nonvolatile read/write memory, the ferroelectric RAM (FRAM). It is suggested that this memory technology will have a significant impact on avionics system performance and reliability
Keywords
IBM compatible machines; aircraft instrumentation; development systems; ferroelectric storage; microcomputers; random-access storage; 16 bit; 8 kbyte; FRAM; IBM PC/AT compatible; Ramtron FED-1; avionics; nonvolatile ferroelectric dynamic RAM; nonvolatile read/write memory; reliability; single-board microcomputer; Aerospace electronics; DRAM chips; Ferroelectric films; Ferroelectric materials; Microcomputers; Nonvolatile memory; Random access memory; Read-write memory; Solid state circuits; System performance;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace and Electronics Conference, 1991. NAECON 1991., Proceedings of the IEEE 1991 National
Conference_Location
Dayton, OH
Print_ISBN
0-7803-0085-8
Type
conf
DOI
10.1109/NAECON.1991.165764
Filename
165764
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