Title :
A multi-band high performance single-chip transceiver for WCDMA/HSDPA
Author :
Chiu, C.S. ; Heng, B.S. ; Khoo, E.S. ; Karri, S.R. ; Kuo, B.J. ; Shen, C.H. ; Sin, T.Y. ; Wang, C.Y. ; Yang, W. ; Zhang, H.L. ; Ali-Ahmad, Walid Y. ; Heng, C.L. ; Dehng, G.K.
Author_Institution :
MediaTek Inc., Hsinchu, Taiwan
Abstract :
A multi-band (bands I, II, V, VIII [option]) single-chip RFIC has been implemented in 0.18 mum SiGe BiCMOS process for WCDMA/HSDPA applications. The direct-conversion receiver achieves competitive system performance: -110.5dBm sensitivity, 20 dB and 12 dB blocking margin for ACS case 1 and case 2, respectively, and excellent in-band blocking margins. The direct-modulation transmitter achieves more than 90 dB dynamic range, and excellent EVM performance: < 3.5%. In Band I, the RX section and TX section draw each 35 mA and 65 mA, respectively. Two dedicated on-chip fast-settling fractional-N synthesizers provide LOs for both RX and TX. The chip is housed in a 5 times 5 mm2 81-pin VFBGA package.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; broadband networks; code division multiple access; frequency synthesizers; radiofrequency integrated circuits; transceivers; BiCMOS process; EVM performance; HSDPA; SiGe; VFBGA package; WCDMA; direct-conversion receiver; multiband high performance single-chip transceiver; on-chip fast-settling fractional-N synthesizer; single-chip RFIC; size 0.18 mum; BiCMOS integrated circuits; Dynamic range; Germanium silicon alloys; Multiaccess communication; Radiofrequency integrated circuits; Silicon germanium; Synthesizers; System performance; Transceivers; Transmitters; BiCMOS; HSDPA; UMTS; WCDMA; direct-conversion receiver; direct-modulation transmitter; transceiver;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135522
