DocumentCode :
2297996
Title :
60GHz passive and active RF-path phase shifters in silicon
Author :
Tsai, Ming-Da ; Natarajan, Arun
Author_Institution :
Mediatek Inc., Hsinchu, Taiwan
fYear :
2009
fDate :
7-9 June 2009
Firstpage :
223
Lastpage :
226
Abstract :
Integrated 60-GHz active and passive phase shifters for RF-path phase-shifting phased array transceivers are demonstrated in this paper. The reflection-type passive phase shifter achieves >180deg phase variation across the 57 GHz-64 GHz band with insertion loss varying from 4.2 dB-7.5 dB at 60 GHz. The active phase shifter employs vector-interpolation architecture and achieves 360deg phase variation, -2 dB gain, 12 GHz 3 dB bandwidth and 16.5 dB noise figure at 60 GHz. Measurements over process and temperature are also discussed and comparisons are drawn between active and passive phase shifting approach for 60 GHz phased arrays.
Keywords :
adaptive antenna arrays; elemental semiconductors; millimetre wave phase shifters; silicon; transceivers; Si; active RF-path phase shifters; bandwidth 12 GHz; frequency 57 GHz to 64 GHz; frequency 60 Hz; gain -2 dB; insertion loss; loss 4.2 dB to 7.5 dB; noise figure 16.5 dB; passive phase shifting approach; phased arrays; Bandwidth; Gain; Insertion loss; Noise figure; Phase measurement; Phase shifters; Phased arrays; Silicon; Temperature; Transceivers; Phase shifter; mm-wave; phased array;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2009.5135527
Filename :
5135527
Link To Document :
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