Single event upset immune GaAs memories

Author

Giedeman, W.A.

fYear

1991

fDate

20-24 May 1991

Firstpage

310

Abstract

The author describes the design and development status of two different memory architectures which both promise immunity to upset from cosmic rays and energetic protons. The first memory is a conventional static RAM with capacitors added in the memory cell to increase the critical charge for upset above the charge deposited by natural events. The second is a nonvolatile memory which uses a capacitor to store the data. Data storage is by electrical polarization in a thin-film ferroelectric material which is not affected by charge deposition. Radiation test results are presented

Keywords

III-V semiconductors; aerospace computing; capacitors; ferroelectric storage; ferroelectric thin films; field effect integrated circuits; gallium arsenide; integrated memory circuits; junction gate field effect transistors; memory architecture; radiation hardening (electronics); random-access storage; GaAs memories; III-V semiconductor; PZT; SRAM; aerospace; capacitors; charge deposition; cosmic rays; critical charge; electrical polarization; energetic protons; memory architectures; memory cell; nonvolatile memory; radiation test; static RAM; thin-film ferroelectric material; Capacitors; Cosmic rays; Gallium arsenide; Memory architecture; Nonvolatile memory; Polarization; Protons; Random access memory; Read-write memory; Single event upset;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1991. NAECON 1991., Proceedings of the IEEE 1991 National

Conference_Location

Dayton, OH

Print_ISBN

0-7803-0085-8

Type

conf

DOI

10.1109/NAECON.1991.165765

Filename

165765