Title :
Single event upset immune GaAs memories
Abstract :
The author describes the design and development status of two different memory architectures which both promise immunity to upset from cosmic rays and energetic protons. The first memory is a conventional static RAM with capacitors added in the memory cell to increase the critical charge for upset above the charge deposited by natural events. The second is a nonvolatile memory which uses a capacitor to store the data. Data storage is by electrical polarization in a thin-film ferroelectric material which is not affected by charge deposition. Radiation test results are presented
Keywords :
III-V semiconductors; aerospace computing; capacitors; ferroelectric storage; ferroelectric thin films; field effect integrated circuits; gallium arsenide; integrated memory circuits; junction gate field effect transistors; memory architecture; radiation hardening (electronics); random-access storage; GaAs memories; III-V semiconductor; PZT; SRAM; aerospace; capacitors; charge deposition; cosmic rays; critical charge; electrical polarization; energetic protons; memory architectures; memory cell; nonvolatile memory; radiation test; static RAM; thin-film ferroelectric material; Capacitors; Cosmic rays; Gallium arsenide; Memory architecture; Nonvolatile memory; Polarization; Protons; Random access memory; Read-write memory; Single event upset;
Conference_Titel :
Aerospace and Electronics Conference, 1991. NAECON 1991., Proceedings of the IEEE 1991 National
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-0085-8
DOI :
10.1109/NAECON.1991.165765
