Title :
A highly efficient GSM/GPRS quad-band CMOS PA Module
Author :
Lee, Chang-Ho ; Chang, Jae Joon ; Yang, Ki Seok ; An, Kyu Hwan ; Lee, Izuka ; Kim, Kijoong ; Nam, Joongjin ; Kim, Yunseok ; Kim, Haksun
Author_Institution :
Samsung Design Center, Atlanta, GA, USA
Abstract :
The highly efficient CMOS power amplifier module (PAM) is designed for quad-band cellular handsets comprising GSM850, EGSM, DCS, PCS and supports Class 12 general packet radio service (GPRS) multi-slot operation. This module integrates an input matching network, a complete power control, and a thermal, over current, and load mismatch protection in a standard RF CMOS process and also contains a high-Q integrated passive device (IPD) for an output-matching network. The modular integration of the IPD makes it easier to manufacture PA module and also guarantees higher power-added efficiency (PAE) when compared with PAM products based on other technologies.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; mobile handsets; packet radio networks; CMOS power amplifier module; Class 12 general packet radio service multislot operation; efficient GSM-GPRS quad-band CMOS PA module; high-Q integrated passive device; input matching network; modular integration; output-matching network; power control; power-added efficiency; quad-band cellular handsets; Distributed control; GSM; Ground penetrating radar; High power amplifiers; Impedance matching; Operational amplifiers; Packet radio networks; Personal communication networks; Radiofrequency amplifiers; Telephone sets; CMOS PA; breakdown; cascode; class-E; power amplifier; transformer;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135528
