A highly efficient GSM/GPRS quad-band CMOS PA Module

Author

Lee, Chang-Ho ; Chang, Jae Joon ; Yang, Ki Seok ; An, Kyu Hwan ; Lee, Izuka ; Kim, Kijoong ; Nam, Joongjin ; Kim, Yunseok ; Kim, Haksun

Author_Institution

Samsung Design Center, Atlanta, GA, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

229

Lastpage

232

Abstract

The highly efficient CMOS power amplifier module (PAM) is designed for quad-band cellular handsets comprising GSM850, EGSM, DCS, PCS and supports Class 12 general packet radio service (GPRS) multi-slot operation. This module integrates an input matching network, a complete power control, and a thermal, over current, and load mismatch protection in a standard RF CMOS process and also contains a high-Q integrated passive device (IPD) for an output-matching network. The modular integration of the IPD makes it easier to manufacture PA module and also guarantees higher power-added efficiency (PAE) when compared with PAM products based on other technologies.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; mobile handsets; packet radio networks; CMOS power amplifier module; Class 12 general packet radio service multislot operation; efficient GSM-GPRS quad-band CMOS PA module; high-Q integrated passive device; input matching network; modular integration; output-matching network; power control; power-added efficiency; quad-band cellular handsets; Distributed control; GSM; Ground penetrating radar; High power amplifiers; Impedance matching; Operational amplifiers; Packet radio networks; Personal communication networks; Radiofrequency amplifiers; Telephone sets; CMOS PA; breakdown; cascode; class-E; power amplifier; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135528

Filename

5135528