Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz

Author

Acar, Mustafa ; Van der Heijden, Mark P. ; Volokhine, Iouri ; Apostolidou, Melina ; Sonsky, Jan ; Vromans, Jan S.

Author_Institution

NXP Semicond. Res., Eindhoven, Netherlands

fYear

2009

fDate

7-9 June 2009

Firstpage

233

Lastpage

236

Abstract

This paper reports RF power devices achieving 70% power-added efficiency (PAE) with 1, 2 and 3.4 W output power at 2 GHz. The power devices operate as sub-optimum class-E power amplifiers, having the advantage of 1.6 times higher output power with a slightly lower PAE than conventional class-E. The power devices use high voltage extended-drain NMOS (ED-NMOS) transistors in standard 65 nm CMOS. A scalable layout design that we used preserves the high PAE for the various output power levels.

Keywords

CMOS integrated circuits; MOSFET; UHF power amplifiers; RF power devices; class-E power amplifiers; extended-drain NMOS transistors; power-added efficiency; scalable CMOS power devices; size 65 nm; CMOS technology; Circuit topology; Communication standards; High power amplifiers; MOS devices; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage; RF; power devices; switching power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135529

Filename

5135529