Title :
Temperature dependence of the threshold and auger recombination in asymmetric quantum-well heterolasers
Author :
Sukhoivanov, Igor A. ; Mashoshina, Olga V. ; Kononenko, Valerii K. ; Ushakov, Dmitrii V.
Author_Institution :
Guanajuato Univ., Salamanca, Mexico
Abstract :
In this work, the temperature dependence of the lasing threshold in the GalnAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (5 and 9 nm) has been determined. The AR rate increases practically exponentially in the temperature interval 250 to 350 K. Including into consideration the processes of nonradiative AR allows to take account of the nonequilibrium processes which occur in the active region of the quantum-well lasers more completely and accurately.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; indium compounds; quantum well lasers; 250 to 350 K; 5 to 9 nm; GaInAs-GaInAsP-InP; GaInAs-GaInAsP-InP bi-quantum-well heterolasers; active region; asymmetric quantum-well; auger recombination; lasing threshold; nonequilibrium process; nonradiative AR; quantum-well lasers; temperature dependence; temperature interval; threshold recombination; Electron optics; Fiber lasers; Laser transitions; Optical refraction; Quantum well lasers; Quantum wells; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on
Print_ISBN :
0-7803-7709-5
DOI :
10.1109/LFNM.2003.1246144
