Temperature compensated BAW resonator and its integrated thermistor for a 2.5GHz electrical thermally compensated oscillator

Author

Petit, D. ; César, E. ; Bar, P. ; Joblot, S. ; Parat, G. ; Berchaud, O. ; Verdier, J. ; Carpentier, J-F.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2009

fDate

7-9 June 2009

Firstpage

339

Lastpage

342

Abstract

This paper presents a miniaturized 2.5 GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonator´s drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from -35degC to +85degC. The oscillator´s phase noise of -113 dBc/Hz at 10 kHz offset from the carrier is reported at 2.5 GHz.

Keywords

UHF oscillators; bulk acoustic wave devices; compensation; phase noise; resonators; surface acoustic wave resonators; temperature sensors; thermistors; differential Colpitts oscillator; electrical thermally compensated oscillator; frequency 10 kHz; frequency 2.5 GHz; integrated temperature molybdenum sensor; integrated thermistor; oscillator phase noise; temperature -35 degC to 85 degC; temperature compensated BAW resonator; Capacitors; Frequency; Oscillators; Phase noise; Q factor; Temperature measurement; Temperature sensors; Thermal sensors; Thermistors; Varactors; BAW-SMR; Differential Colpitts oscillator; Quartz; Temperature compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135553

Filename

5135553