High frequency noise in deep-submicron NMOSFETs under different hot carrier stresses

Author

Su, Hao ; Wang, Hong ; Sun, Zhiyong ; Xu, Tao

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

7-9 June 2009

Firstpage

351

Lastpage

354

Abstract

Degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer NMOSFETs after different hot-carrier (HC) stresses are investigated. It is demonstrated that device noise parameters, such as NF_min and R_n degrade most under maximum substrate-current (I_B,max) stress. On the other hand, hot electron and hot hole injection have much lower degradation on device noise performance. The high frequency noise degradation is mainly attributed to the additional channel noise associated with HC induced interface traps.

Keywords

MOSFET; hot carriers; semiconductor device noise; channel noise; deep-submicron NMOSFETs; device noise parameters; high-frequency noise degradation; hot carrier stresses; hot electron injection; hot hole injection; interface traps; maximum substrate-current stress; CMOS technology; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOSFETs; Noise generators; Radio frequency; Semiconductor device noise; Stress; Hot carrier stress; MOSFETs; channel noise; high frequency noise; interface traps; oxide traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135556

Filename

5135556