DocumentCode :
2298552
Title :
High frequency noise in deep-submicron NMOSFETs under different hot carrier stresses
Author :
Su, Hao ; Wang, Hong ; Sun, Zhiyong ; Xu, Tao
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2009
fDate :
7-9 June 2009
Firstpage :
351
Lastpage :
354
Abstract :
Degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer NMOSFETs after different hot-carrier (HC) stresses are investigated. It is demonstrated that device noise parameters, such as NFmin and Rn degrade most under maximum substrate-current (IB,max) stress. On the other hand, hot electron and hot hole injection have much lower degradation on device noise performance. The high frequency noise degradation is mainly attributed to the additional channel noise associated with HC induced interface traps.
Keywords :
MOSFET; hot carriers; semiconductor device noise; channel noise; deep-submicron NMOSFETs; device noise parameters; high-frequency noise degradation; hot carrier stresses; hot electron injection; hot hole injection; interface traps; maximum substrate-current stress; CMOS technology; Charge carrier processes; Degradation; Electron traps; Hot carriers; MOSFETs; Noise generators; Radio frequency; Semiconductor device noise; Stress; Hot carrier stress; MOSFETs; channel noise; high frequency noise; interface traps; oxide traps;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2009.5135556
Filename :
5135556
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2298552
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