DocumentCode :
2298577
Title :
K-band diamond MESFETs for RFIC technology
Author :
Calvani, P. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Giovine, E. ; Ciccognani, W. ; Limiti, E.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy
fYear :
2009
fDate :
7-9 June 2009
Firstpage :
355
Lastpage :
358
Abstract :
Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (Pout=1.5 W/mm) and high frequency (and fMAX=35 GHz) performances have been obtained.
Keywords :
Schottky gate field effect transistors; diamond; elemental semiconductors; microwave devices; radiofrequency integrated circuits; wide band gap semiconductors; C; K-band diamond MESFET; RFIC technology; frequency 18 GHz to 27 GHz; frequency 35 GHz; h-terminated polycrystalline diamond; metal semiconductor field effect transistor; vacuum electronics replacement; Electromagnetic heating; FETs; Hydrogen; K-band; MESFETs; Radio frequency; Radiofrequency integrated circuits; Rough surfaces; Surface roughness; Surface treatment; Diamond; RF performances; RFICs; microwave operation; wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2009.5135557
Filename :
5135557
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2298577
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