K-band diamond MESFETs for RFIC technology

Author

Calvani, P. ; Sinisi, F. ; Rossi, M.C. ; Conte, G. ; Giovine, E. ; Ciccognani, W. ; Limiti, E.

Author_Institution

Electron. Eng. Dept., Univ. of Roma Tre, Rome, Italy

fYear

2009

fDate

7-9 June 2009

Firstpage

355

Lastpage

358

Abstract

Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P_out=1.5 W/mm) and high frequency (and f_MAX=35 GHz) performances have been obtained.

Keywords

Schottky gate field effect transistors; diamond; elemental semiconductors; microwave devices; radiofrequency integrated circuits; wide band gap semiconductors; C; K-band diamond MESFET; RFIC technology; frequency 18 GHz to 27 GHz; frequency 35 GHz; h-terminated polycrystalline diamond; metal semiconductor field effect transistor; vacuum electronics replacement; Electromagnetic heating; FETs; Hydrogen; K-band; MESFETs; Radio frequency; Radiofrequency integrated circuits; Rough surfaces; Surface roughness; Surface treatment; Diamond; RF performances; RFICs; microwave operation; wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135557

Filename

5135557