Title :
A 90nm CMOS power amplifier for 802.16e (WiMAX) applications
Author :
Degani, Ofir ; Cossoy, Fabian ; Shahaf, Shay ; Chowdhury, Debopriyo ; Hull, Christopher D. ; Emanuel, Cohen ; Shmuel, Ravid
Author_Institution :
Mobility Wireless Group, Intel Corp., Haifa, Israel
Abstract :
We demonstrate a single stage 90 nm CMOS power amplifier for 2.3-2.7 GHz WiMAX (802.16e) band applications. An integrated BALUN is used to match the output to 50 ohm load. The PA gain and saturated power are +18 dB and +32 dBm, respectively, working from a 3.3 V supply, with a peak power added efficiency (PAE) of 48%. Digital pre distortion (DPD) technique is used to enhance the PA linearity. The measured EVM for a 64-QAM OFDM signal is improved from -24 dB to -30 dB at +25 dBm output power. Compliance with the FCC 10 MHz WiMAX mask is demonstrated at +25 dBm of output power with power efficiency of ~25%. Under these conditions, the measured second harmonic level at the PA output is -31[dBm/MHz].
Keywords :
CMOS integrated circuits; UHF power amplifiers; WiMax; baluns; 64-QAM OFDM signal; 802.16e WiMAX band applications; CMOS power amplifier; EVM; FCC WiMAX mask; digital predistortion; frequency 10 MHz; frequency 2.3 GHz to 2.7 GHz; gain 18 dB; integrated balun; peak power added efficiency; resistance 50 ohm; second harmonic level; size 90 nm; voltage 3.3 V; CMOS technology; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Linearity; OFDM; Peak to average power ratio; Power amplifiers; Signal design; WiMAX; 802.16e; CMOS; Wimax; power amplifiers; pre distortion;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135561
