An inductorless high dynamic range 0.3 − 2.6 GHz receiver CMOS front-end

Author

Poobuapheun, Nuntachai ; Chen, Wei-Hung ; Boos, Zdravko ; Niknejad, Ali M.

Author_Institution

Berkeley Wireless Res. Center, Berkeley, CA, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

387

Lastpage

390

Abstract

This paper presents a wideband receiver front-end implemented in 0.13 mum CMOS technology. The front-end consists of a low-noise amplifier (LNA), a quadrature mixer, and a frequency divider. Multi-gated transistors have been used to enable linearity tuning. The circuit employs no inductors and operates from 0.3-2.6 GHz with a tunable baseband bandwidth. The front-end achieves conversion voltage gain of 38 dB, 3.6 dB DSB NF, nominal -6.5 dBm IIP₃ and +4 dBm when tuned in the high-gain mode. The chip consumes 35 mA from a 1.5 V supply.

Keywords

CMOS integrated circuits; UHF amplifiers; circuit tuning; frequency dividers; low noise amplifiers; radio receivers; wideband amplifiers; CMOS technology; current 35 mA; frequency 0.3 GHz to 2.6 GHz; frequency divider; low-noise amplifier; multigated transistors; quadrature mixer; size 0.13 mum; tuning circuits; voltage 1.5 V; wideband receiver front-end; CMOS technology; Circuit optimization; Dynamic range; Frequency conversion; Inductors; Linearity; Low-noise amplifiers; Mixers; Tuning; Wideband; CMOS; LNA; broadband front-end; mixers; multi-band receivers; receiver front-ends; software defined radio (SDR);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135564

Filename

5135564