Title :
An inductorless high dynamic range 0.3 − 2.6 GHz receiver CMOS front-end
Author :
Poobuapheun, Nuntachai ; Chen, Wei-Hung ; Boos, Zdravko ; Niknejad, Ali M.
Author_Institution :
Berkeley Wireless Res. Center, Berkeley, CA, USA
Abstract :
This paper presents a wideband receiver front-end implemented in 0.13 mum CMOS technology. The front-end consists of a low-noise amplifier (LNA), a quadrature mixer, and a frequency divider. Multi-gated transistors have been used to enable linearity tuning. The circuit employs no inductors and operates from 0.3-2.6 GHz with a tunable baseband bandwidth. The front-end achieves conversion voltage gain of 38 dB, 3.6 dB DSB NF, nominal -6.5 dBm IIP3 and +4 dBm when tuned in the high-gain mode. The chip consumes 35 mA from a 1.5 V supply.
Keywords :
CMOS integrated circuits; UHF amplifiers; circuit tuning; frequency dividers; low noise amplifiers; radio receivers; wideband amplifiers; CMOS technology; current 35 mA; frequency 0.3 GHz to 2.6 GHz; frequency divider; low-noise amplifier; multigated transistors; quadrature mixer; size 0.13 mum; tuning circuits; voltage 1.5 V; wideband receiver front-end; CMOS technology; Circuit optimization; Dynamic range; Frequency conversion; Inductors; Linearity; Low-noise amplifiers; Mixers; Tuning; Wideband; CMOS; LNA; broadband front-end; mixers; multi-band receivers; receiver front-ends; software defined radio (SDR);
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135564
